Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
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Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy
Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a signi cant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers...
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Device-performances of 3.7 THz indirect-pumping quantumcascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum o...
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Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy Toshihiro Asai and David S. Dandy Dept. of Chemical Engineering, Colorado State University, Fort Collins, Colorado 80523-1370 A thermodynamic analysis has been applied to systematically study III-V semiconductor alloy deposition, including nitrides grown by metalorganic vapor phase epitaxy. The predic...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2002
ISSN: 0103-9733
DOI: 10.1590/s0103-97332002000200032